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NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE

Published online by Cambridge University Press:  28 February 2011

P. M. PETROFF*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The perfection and compositional stability of alternate monolayer compounds (AMC) structures deposited by molecular beam epitaxy as a function of several crystal growth parameters are reviewed. By using the (GaAs)1 - (AlAs)1 AMC structure as a prototype system, the effects of substrate temperature, and orientation on the AMC ordering are presented. Conditions for producing new superlattice architectures are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

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