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A New Self-Aligned Poly-Si Tft Employing a Pre-Patterned Al Mask Layer by Backside Exposure Technique

  • Woo-Jin Nam (a1), Min-Cheol Lee (a1), Kee-Chan Park (a1), Jae-Hoon Lee (a1) and Min-Koo Han (a1)...

Abstract

A new self-aligned poly-Si TFT has been fabricated by employing a photoresist backside exposure technique. A pre-patterned aluminum (Al) layer on a-Si film not only induces the lateral grain growth (∼1.6 μm) in excimer laser crystallization but also implements the selfalignment of the gate region with the lateral grain region. Photoresist backside exposure through poly-Si film has been successfully performed because crystallized poly-Si has a fairly high UV transmittance. A self-aligned poly-Si TFT with a single grain boundary within the 2 μm channel was successfully fabricated and high on/off current ratio (∼107) was obtained.

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[1] Hawkins, W. G., IEEE Trans. Electron Devices, vol. 33, pp. 477481, 1986
[2] Jeon, J. H., Lee, M. C., Park, K. C. and Han, M. K., IEEE Electron Device Letters, vol. 22, no. 9, pp.429431, 2001
[3] Mei, P., Boyce, J. B. et al., Journal of Non-Crystalline Solids, part B, pp.12521259, 2000
[4] Kim, J. H. and Kanicki, J., Asia Display/IDW '01, pp.439442, 2001
[5] Im, J. S. and Kim, H. J., Appl. Phys. Lett., vol. 63, no. 14, pp.19691971, 1993
[6] Sze, S. M., “Physics of Semiconductor Devices,” 2nd edition, p.40, 1981

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A New Self-Aligned Poly-Si Tft Employing a Pre-Patterned Al Mask Layer by Backside Exposure Technique

  • Woo-Jin Nam (a1), Min-Cheol Lee (a1), Kee-Chan Park (a1), Jae-Hoon Lee (a1) and Min-Koo Han (a1)...

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