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A New Practical Approach to Implement a Transient Enhanced Diffusion Model into an Fem-Based 2-D Process Simulator

Published online by Cambridge University Press:  10 February 2011

Noriyuki Sugiyasu ,
Kaina Suzuki ,
Syuichi Kojima  and
Yasushi Ohyama
Noriyuki Sugiyasu
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, sugi@ulsim.ed.fijjitsu.co.jp
Kaina Suzuki
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, sugi@ulsim.ed.fijjitsu.co.jp
Syuichi Kojima
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, sugi@ulsim.ed.fijjitsu.co.jp
Yasushi Ohyama
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, sugi@ulsim.ed.fijjitsu.co.jp
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Abstract

We have proposed a coupled and de-coupled combined method to solve partial differential equations for a transient enhanced diffusion model. In the case of a boron diffusion process, the sum of concentrations of interstitial Si and of impurity-interstitial pair, the sum of concentrations of vacancy and of impurity-vacancy pair and each chemical impurity concentration are kept constant. The charge neutrality law is also applied. This procedure has realized a robust solution system which is implemented into our in-house FEM-based 2-D process simulator, and transient enhanced diffusion simulations for a sub-quarter micron nMOSFET have been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Law, M.E., Park, H. and Novell, P., Appl. Phys Lett. 59 (26), 3488 (1991)Google Scholar
2. Park, H. and Law, M.E., J. Appl. Phys. 72(8), 3431 (1992)Google Scholar
3. Sugiyasu, N., Suzuki, K., Kojima, S., Ohyama, Y. and Goto, H., JSAPRS (The 42nd Spring Meeting, 1995) 28a-TF-3Google Scholar
4. Hane, M., Ikezawa, T., Hiroi, M. and Matsumoto, H., IEEE IEDM 803 (1996)Google Scholar
5. Rafferty, C.S., Voung, H.-H., Eshraghi, S.A., Giles, M.D., Pinto, M.R. and Hillenius, S.J., IEEE IEDM 311 (1993)Google Scholar