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A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

  • Naoto Miyashita (a1), Shin-ichiro Uekusa (a2), Takeshi Nishioka (a3) and Satoko Iwami (a3)

Abstract

Chemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

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[1] Abbas, S. A. : “Silicon on poly silicon with deep dielectric isolation”, Proc. of IBM' Technical Disclosure Bulletin Vol. No.7 Dec. 1997 P.2754
[2] Hetherington, D. L. : “The effects of double-sided scrubbing on removal of particles and metal contamination from chemical-mechanical-polished wafers”, Proc. of DUMIC Conference 1995 ISMIC-101D/95/0156
[3] Miyashita, N., Minami, Y., Katakabe, I., Takayasu, J., Abe, M., Izumi, T.: “Characterization of new post CMP cleaning method for trench isolation process” Proc. of Proceedings of 14th International Vacuum Congress. (1999)P.71 10.1557/PROC-566-253
[4] Miyashita, N., mase, Y., Takayasu, J., Minami, Y., Kodera, M., Abe, M., and Izumi, T.: “Mechanism of a new post CMP cleaning for trench isolation process.” Proc. of Proceedings of MRS.Vol.566 (1999)P. 253 10.1557/PROC-566-253
[5] Nishioka, T., Sekine, K. and Tateyama, Y.: ”Modeling on hydrodynamic effects of pad surface roughness in CMP process” Proc. IEEE 1999 Int. Interconnect Tech. Conf. (1999) p.89

A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

  • Naoto Miyashita (a1), Shin-ichiro Uekusa (a2), Takeshi Nishioka (a3) and Satoko Iwami (a3)

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