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A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

  • Mitsuaki Hori (a1), Naoyoshi Tamura (a1), Masataka Kase (a1), Hiroko Sakuma (a1), Hiroyuki Ohota (a1), Mayumi Shigeno (a2) and Yuuzi Kataoka (a2)...

Abstract

We propose a new parameter predicating transconductance (G m) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of G m and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

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[1] Nakai, S. et al.; Symp. on VLSI Tech. 7–3 (2002)
[2] Inaba, S. et al.; IEDM Tech. Dig. 29.6, p.423 (2001)
[3] Kataoka, Y., Shigeno, M. and Wittmaack, K., J. Vac.Sci.Technol. B 20 (1), 441 (2002)
[4] Wittmaack, K. and Loibl, N, Proc. of SIMS, p131 (2001)
[5] Kushida-Abdelghafar, Keiko et al.; J.Appl.Phys., Vol.92, No 5, 1 (2002)
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A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

  • Mitsuaki Hori (a1), Naoyoshi Tamura (a1), Masataka Kase (a1), Hiroko Sakuma (a1), Hiroyuki Ohota (a1), Mayumi Shigeno (a2) and Yuuzi Kataoka (a2)...

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