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A New Method for the Derivation of the Output Characteristics of Amorphous Silicon Thin-Film Transistors.
Published online by Cambridge University Press: 16 February 2011
Abstract
A novel method to derive the output characteristics of a-Si:H thin film transistors from the channel conductance curve is presented. The Method well reproduces the experimental data both in the linear and saturation regimes without using any adjustable parameter. The Method is simple and fast enough to be used in a circuit simulator.
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- Research Article
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- Copyright © Materials Research Society 1994
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