Skip to main content Accessibility help
×
Home

A New Method for Measuring Ion Implantation Amorphous Dose In Situ

  • Jianzhong Yuan (a1), Igor V. Verner (a1) and James W. Corbett (a1)

Abstract

An in situ method for determining the ion implantation dose necessary to make Si amorphous is developed and utilized. This method is based on measuring ion-implantation-induced in-plane stress. Measurements are carried out for various low energy ions implanted into thin p-type (100) Si. The doses necessary to make Si amorphous obtained by this method are in good agreement with previous data. This technique is sensitive, informative, quick, visual and nondestructive.

Copyright

References

Hide All
1. Corbett, J.W., Karins, J.P. and Tan, T.Y., Nucl. Inst. and Methods 182/183 (1981) 457.
2. Brinkman, J.A., J. Appl. Phys. 25 (1974) 961.
3. Brinkman, J.A., Am. J. Phys. 24 (1956) 246.
4. Nelson, R.S., in Ion Implantation, eds., Dearnley, G., Freeman, J.H., Nelson, R.S. and Stephen, J. (North-Holland, Amsterdam, 1973) p. 144.
5. Yuan, J.Z. and Corbett, J.W., submitted to Rad. Eff.
6. Vook, F.L. Stein, H.J., Rad. Eff. 2 (1969) 23.
7. Chadderton, L.T., Rad. Eff. 8 (1971) 77.
8. Morhead, F.F. and Crowder, B.L., Rad. Eff. 6 (1970) 27.
9. Gibbons, J.F., Proc. IEEE 60, (1972) 1062.
10. Dennis, J.R. and Hale, E.B., Rod. Eff. 19 (1973) 67.
11. Vook, F.L., in Radiation damage in Semiconductors, ed. Whitehouse, J.E. (Institute of Physics, London, 1972) p. 60.
12. Muller, H., Schmid, K., Ryssel, H. and Ruge, I., in Ion Implantation in Semiconductors and Other Materials, ed. Crowder, B.L. (Plenum, New York, 1973) p. 203.
13. Meek, R.L., Gibson, W.M., and Scellschop, J.P.F., Rod. Eff. 11 (1971) 139.
14. Volkert, C.A., in Beam-Solid Interactions: Physical Phenomena, MRS Symposia Proceedings, ed. Knapp, J.A., Borgesen, P., and Zuhr, R.A. (MRS, Pittsburgh, PA, 1990), p. 635.
15. Yuan, J.Z. and Corbett, J.W., 22nd NATO Advanced Material Institute, Italy 1991.
16. Hoffman, R.W., in Physics of Thin Films, ed. Hass, G. and Thun, R.E. (Academic Press, New York, 1966) p. 211.
17. Yuan, J.Z., Corbett, J.W. and Yencha, A.J., 16th Int'l Conf. on Defects in Semiconductors, Bethleham, PA, 1991
18. Dennis, J.R. and Hale, E.B., J. Appl. Phys., 49(3) (1978) 1119.
19. Danilin, A.B. and Mordkovich, V.N., Rod. Eff. and Def in Solids, 113, (1990) 277.
20. Yuan, J.Z., Verner, I.V., Maksimov, S.K., and Corbett, J.W., in present volume of Mater. Res. Soc. Symp., 1991.
21. Liefting, J.R., Raineri, V., Schreutelkamp, R.J., Custer, J.S., and Saris, F.W., in present volume of Mater. Res. Soc. Symp., 1991.
22. Volkert, C.A., J. Appl. Phys. 70(7) (1991) 3521.

A New Method for Measuring Ion Implantation Amorphous Dose In Situ

  • Jianzhong Yuan (a1), Igor V. Verner (a1) and James W. Corbett (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed