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A new mechanism in the growth process of GaN by HVPE

Published online by Cambridge University Press:  17 March 2011

A. Trassoudaine ,
E. Aujol ,
R. Cadoret ,
T. Paskova  and
B. Monemar
A. Trassoudaine
Affiliation:
Lasmea, Université Blaise Pascal Clermont II, F-63177 Aubière Cedex, FRANCE
E. Aujol
Affiliation:
Lasmea, Université Blaise Pascal Clermont II, F-63177 Aubière Cedex, FRANCE
R. Cadoret
Affiliation:
Lasmea, Université Blaise Pascal Clermont II, F-63177 Aubière Cedex, FRANCE
T. Paskova
Affiliation:
Department of Physics and Measurements Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurements Technology, Linköping University, S-581 83 Linköping, SWEDEN
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Abstract

Experimental results obtained in two different HVPE reactors are analyzed and compared to the theoretical curves, taking into account the surface kinetics, the mass transfer, and parasitic deposition on the glass walls before the substrate. Unexpected high growth rate values, up to 50νm/h, were measured in conditions of expected substrate etching by HCl. A systematic experimental study of this new phenomenon is presented together with a theoretical analysis. This analysis suggests a new mixed general mechanism of growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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