Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-24T07:04:54.016Z Has data issue: false hasContentIssue false
  • English
  • Français

New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors

Published online by Cambridge University Press:  03 September 2012

J.D. Albrecht ,
P.P. Ruden  and
M.G. Ancona
J.D. Albrecht
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A. Electronic Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, U.S.A.
P.P. Ruden
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
M.G. Ancona
Affiliation:
Electronic Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, U.S.A.
Get access

Abstract

A new model is used to examine the DC output characteristics of AlGaN/GaN heterostructure field effect transistors. The model is based on the charge-control/gradualchannel approximation and takes into account the non-linear current vs. voltage characteristics of the ungated AlGaN/GaN heterostructure channel regions. The model also includes thermal effects associated with device self-heating. For the power dissipation levels considered for many applications, the thermal degradation of the carrier drift velocity is shown to cause a negative output conductance in saturation. The temperature is incorporated self-consistently into the model through the field and temperature dependent mobility obtained from Monte Carlo transport simulations for electron transport in GaN. Calculated results presented for the DC output characteristics of several AlGaN/GaN field effect transistors show a strong dependence on the thermal properties of the substrate material. The substrate materials considered in this work are sapphire, SiC, AlN, and GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.15
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nguyen, N.X., Nguyen, C., and Grider, D.E., Electr. Lett 34, 811, (1998).Google Scholar
2 Xu, J.J., Wu, Y.-F., Keller, S., Parish, G., Heikman, S., Thibeault, B.J., Mishra, U.K., and York, R. A., IEEE Microwave and Guided Wave Letters. 9, 277, (1999).Google Scholar
3 Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., and Jenkins, T.J., IEEE Electr. Dev. Lett. 20, 161, (1999).Google Scholar
4 Albrecht, J.D., Wang, R.P., Ruden, P.P., Farahmand, M., and Brennan, K.F., J. Appl. Physics 83, 4777, (1998).Google Scholar
5 Ruden, P.P., Albrecht, J.D., Sutandi, A., Binari, S.C., Ikossi-Anastasiou, K., Ancona, M.G., Koleske, D.D., and Wickenden, A.E., MRS Int. J. Nit. Sem. Res. 4S1, GG6.35 (1999).Google Scholar
6 Albrecht, J.D., Ruden, P.P., Binari, S.C., Ikossi-Anastasiou, K., Ancona, M.G., Henry, R.L., Koleske, D.D., and Wickenden, A.E., Mat. Res. Soc. Symp. Proc. 572, 489, (1999).Google Scholar
7 Albrecht, J.D., Ruden, P.P., Ancona, M.G., and Binari, S.C., submitted for publication.Google Scholar
8 Wang, R., Ruden, P.P., Kolnik, J., Oguzman, I., and Brennan, K.F., J. Phys. Chem. Sol. 58, 913, (1997).Google Scholar
9 Albrecht, J.D., Wang, R.P., Ruden, P.P., Farahmand, M., Bellotti, E., and Brennan, K.F., Mat. Res. Soc. Symp. Proc. 482, 815, (1998).Google Scholar