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A New Ion Beam Deposition Technique for Low Temperature Silicon Epitaxy

Published online by Cambridge University Press:  21 February 2011

S. Mohajerzadeh ,
C.R. Selvakumar ,
D.E. Brodie ,
M.D. Robertson  and
J.M. Corbett
S. Mohajerzadeh
Affiliation:
Department of Electrical and Computer Engineering
C.R. Selvakumar
Affiliation:
Department of Electrical and Computer Engineering
D.E. Brodie
Affiliation:
Department of Physics, University of Waterloo, Waterloo, ontario, Canada, N2L 3G1
M.D. Robertson
Affiliation:
Department of Physics, University of Waterloo, Waterloo, ontario, Canada, N2L 3G1
J.M. Corbett
Affiliation:
Department of Physics, University of Waterloo, Waterloo, ontario, Canada, N2L 3G1
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Abstract

We report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas generated with a Kaufman type ion gun. This investigation shows island-growth at higher substrate temperatures (500-700°C) in the form of square-based pyramids. by lowering the substrate temperature to 300°C, we were able to achieve a planar growth. the growth rate can be enhanced by introducing elemental Si from a thermal evaporation source. Scanning electron microscopy, transmission electron microscopy and electron diffraction analysis were used to study the crystalline quality of the samples prepared at different temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 201
Copyright
Copyright © Materials Research Society 1995

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References

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