Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-16T04:07:47.452Z Has data issue: false hasContentIssue false
  • English
  • Français

A New General Method for the Determination of Optical Properties of Amorphous Silicon Films

Published online by Cambridge University Press:  25 February 2011

G. Amato ,
L. Boarino ,
F. Fizzotti  and
C. Manfredotti
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
L. Boarino
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italy
F. Fizzotti
Affiliation:
Dipartimento di Fisica Sperimentale, Università di Torino, Via P. Giuria 1, 10125 Torino, Italy
C. Manfredotti
Affiliation:
Dipartimento di Fisica Sperimentale, Università di Torino, Via P. Giuria 1, 10125 Torino, Italy
Get access

Abstract

We propose to apply a new method to model the optical response of amorphous silicon thin films. This method presents the advantage of having a good physical insight. On the other hand, although the model has been originally tested on different materials like a-Si, a-Ge and a-GaAs, we show that it is also sensitive to small differences like those that can exist between intrinsic and doped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 633
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Wemple, S.H. and Di Domenico, M. Jr., Phys. Rev. Lett. 1156 (1969).Google Scholar
Kramer, B., Masche, K. and Thomas, P., Phys. Stat. Sol. B 49, 525 (1972).Google Scholar
3. Afromowitz, M., Solid-State Commun. 15, 59 (1974).Google Scholar
4. Pikhtin, A.N. and Yas’kov, A.D., Sov. Phys. Semicond. 12, 622 (1978).Google Scholar
5. Buus, J. and Adams, M.J., Solid-State Electron. Devices 3, 189 (1979).Google Scholar
6. Adachi, Sadao, J. Appl. Phys. 53, 5863 (1982).Google Scholar
7. Jensen, B. and Torabi, A., J. Appl. Phys. 54, 3623 (1983).Google Scholar
8. Campi, D. and Papuzza, C., J. Appl. Phys. 57, 1305 (1985).Google Scholar
9. Campi, D. and Coriasso, C., J. Appl. Phys. 64, 4128 (1988).Google Scholar
10. Harrison, W.A., Electronic Structure and the Properties of Solids (Freeman, San Francisco, 1980).Google Scholar
11. Klein, M.V., Optics (Wiley, New York, 1970).Google Scholar
12. Tauc, J. in Optical Properties of Non-Crystalline Solids, edited by Abeles, F. (North-Holland, Amsterdam, 1972).Google Scholar
13. Jones, W. and March, N., Theoretical Solid State Physics (Wiley, London, 1973), Vol. 2.Google Scholar
14. Van Vechten, J.A., Phys. Rev., 187, 1007 (1969).Google Scholar
15. Cody, G.D. in Physics and Application of Amorphous Semiconductors, edited by Demichelis, F. (World Scientific, Singapore, 1988).Google Scholar
16. Forouhi, A.R. and Bloomer, F., Phys. Rev. B 34, 7018 (1986).Google Scholar