Skip to main content Accessibility help
×
Home

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

  • Kianoush Naeli (a1), Shamsoddin Mohajerzadeh (a1), Ali Khakifirooz (a2), Saber Haji (a1) and Ebrahim A. Soleimani (a1)...

Abstract

The effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Copyright

References

Hide All
1. Lee, S.-W. and Joo, S.-K., IEEE Electron Device Lett. 17, 160 (1996).
2. Lee, S.-W., Ihn, T.-K., Joo, S.-K., IEEE Electron Device Lett. 17, 407 (1996).
3. Kim, T.-K., Lee, B.-I., Joo, S.-K., IEEE Device Res. Conf., 100 (1998).
4. Jagar, S., Chan, M., Poon, M.C., Wang, H., Qin, M., Ko, P.K., Wang, Y., IEEE Int. Electron Device Meeting, 293 (1999).
5. Jin, Z., Kwok, H.S., Wong, M., IEEE Electron Device Lett. 20, 167 (1999).
6. Wong, M., Jin, Z.; Bhat, G. A., Wong, P.C., Kwok, H.S., IEEE Trans. Electron Devices 47, 1061 (2000).
7. Meng, Z., Wang, M., Wong, M., IEEE Trans. Electron Devices 47, 404 (2000).10.1109/16.822287
8. Subramanian, V. and Saraswat, K.C., IEEE Trans. Electron Devices 45, 1934 (1998).
9. Subramanian, V., Toita, M., Ibrahim, N.R., Souri, S.J., Saraswat, K.C., IEEE Electron Device Lett. 20, 341 (1999).
10. Jang, J., Oh, J.-Y., Kim, S.-K., Choi, Y.-J., Yoon, S.-Y., Kim, C.-O., Nature 395, 481 (1998).
11. Yoon, S.-Y., Oh, J.-Y., Kim, C.-O., Jang, J., J. Appl. Phys. 84, 6463 (1998).
12. Park, S.-H., Jun, S.-I., Song, K.-S., Kim, C.-K., Choi, D.-K., Jpn. J. Appl. Phys., Part 2 38, L108 (1999).
13. Jun, S.-I., Yang, Y.-H., Lee, J.-B., Choi, D.-K., Appl. Phys. Lett. 75, 2235 (1999).
14. Khakifirooz, A., Mohajerzadeh, S., Haji, S., 47th Int. AVS Symp. (2000).

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

  • Kianoush Naeli (a1), Shamsoddin Mohajerzadeh (a1), Ali Khakifirooz (a2), Saber Haji (a1) and Ebrahim A. Soleimani (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed