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New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

Published online by Cambridge University Press:  25 February 2011

Y. Takeuchi ,
K. Nomoto ,
G. Ganguly  and
A. Matsuda
Y. Takeuchi
Affiliation:
Mitsubishi Heavy Industries, Ltd. Nagasaki R&D Center 1–1, Akunoura-machi, Nagasaki, Japan
K. Nomoto
Affiliation:
Sharp Corporation, Energy Conversion Laboratories, 283–1 Hajikami, Shinjo-cho, Nara 639–21, Japan
G. Ganguly
Affiliation:
Indian Association for the Cultivation of Science, Calcutta 700032, India
A. Matsuda
Affiliation:
Electrotechnical Laboratory 1–1–4, Umezono, Tsukuba-shi, Ibaraki 305, Japan
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Abstract

Highly conductive B-doped hydrogenated amorphous Si (a-Si:H) as well as amorphous SiC alloys (a-SiC:H) have been prepared from (SiH4) / (B2H6/SiH4) and (SiH4/CH4)/(B2H6/SiH4) plasmas, respectively by a novel surface-temperature-modulation method. Films produced by this technique exhibit a higher conductivity as compared to the conventionally prepared films, i.e., 7.0×l0−3scm−l for p-type a-Si:H with an optical gap of 1.7eV and 5.5×l0−5Scm−l for p-type a-SiC:H of optical gap 1.9eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 487
Copyright
Copyright © Materials Research Society 1990

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References

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