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A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

  • Steven J. Morris (a1), Shyh-Horng Yang (a1), David H. Lim (a1) and AL. F. Tasch (a1)

Abstract

In this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.

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1 Klein, K., Park, C., and Tasch, A., IEEE Trans, on Elec. Dev. 39, 1614 (1992).
2 Tasch, A., Shin, H., Park, C., Alvis, J., and Novak, S., IEEE J. Elec. Soc. 136, 810 (1989).

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