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A New Application of Rbs-Pixe with High Energy Microbeam

  • B. Raicu (a1), H. Bakhru (a2), S. Fesseha (a1) and W. M. Gibson (a2)

Abstract

A beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

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A New Application of Rbs-Pixe with High Energy Microbeam

  • B. Raicu (a1), H. Bakhru (a2), S. Fesseha (a1) and W. M. Gibson (a2)

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