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Negative Electron Affinity Effects And Schottky Barrier Height Measurements Of Metals On Diamond (100) Surfaces

Published online by Cambridge University Press:  10 February 2011

P. K. Baumann  and
R. J. Nemanich
P. K. Baumann
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

In this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2Å of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 157
Copyright
Copyright © Materials Research Society 1996

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References

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