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Near-Intrinsic Microcrystalline Silicon for Use in Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

M. W. D. Froggatt ,
W. I. Milne  and
M. J. Powell
M. W. D. Froggatt
Affiliation:
Department of Engineering, Cambridge University, Cambridge, England
W. I. Milne
Affiliation:
Department of Engineering, Cambridge University, Cambridge, England
M. J. Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
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Abstract

Inverted-staggered thin film transistors (TFTs) incorporating hydrogenated microcrystalline silicon for both contact and channel regions have been fabricated by plasma enhanced chemical vapour deposition (PECVD) using the high hydrogen-dilution method. The deposition parameters for the channel region were chosen to yield near-intrinsic material with a dark conductivity activation energy of 0.7 eV and a Tauc gap of 1.98 eV, while the doped contact layer was optimised to produce a high dark conductivity of 10 S/cm.

These devices exhibit a low off-current but the field effect mobility is found to be lower than that of similar devices incorporating an optimised amorphous silicon channel region. The mobility activation energy in these devices is similar to those incorporating an amorphous channel, but the mobility pre-factor is reduced. We propose that this is due to inhomogeneous conduction through a microcrystalline region with a smaller grain size at the dielectric/channel interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 893
Copyright
Copyright © Materials Research Society 1997

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References

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