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Near Ir Emissions from Er, Tm, AND Pr Implanted GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

G.S. Pomrenke ,
Y.K. Yeo  and
R.L. Hengehold
G.S. Pomrenke
Affiliation:
Air Force Office of Scientific Research, Bolling Air Force Base, Washington, D.C. 20332
Y.K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
R.L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson Air Force Base, OH 45433
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Abstract

Optical properties of Er, Tr, and Pr ion implanted GaAs and A1xGa1−xAs were investigated using photoluminescenoe. For Er, the characteristic sharp emissions around 1.54 μm were observed at sample temperatures as high as 296 K, which are due to the transitions between the weakly crystal-field-split spin-orbit levels 4I13/2 and 4I15/2 of Er3+ (4f11) ; the strongest luminescence signal was from A10.4Ga0 6As. For Tm, the sharp 4f-emissions were observed between 1.22 to 1.33 μm at sample temperatures up to 200 K, and are due to the transitions between levels 3H5 and 3H6 of Tm3+ (4f12). For Pr, three sets of 4f-emissions were observed at 1.05, 1.35, and 1.6 μm due to transitions between levels 1G4∼3H4, 1G4∼3H5, and 3F3 ∼ 3H4 of Pr3+(4f2), respectively, and the highest temperature at which sharp emissions were observed was around 175 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 415
Copyright
Copyright © Materials Research Society 1991

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References

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