Hostname: page-component-7c8c6479df-8mjnm Total loading time: 0 Render date: 2024-03-29T07:39:20.767Z Has data issue: false hasContentIssue false

Near Infrared Response of Amorphous Silicon Detector Grown with Microcompensated Absorber Layer

Published online by Cambridge University Press:  15 February 2011

D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
G. De Cesare
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
A. Nascetti
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
M. Tucci
Affiliation:
ENEA, Research Centre, Localit. Granatello, 80055, Portici, Napoli, Italy
Get access

Abstract

In this work we demonstrate that radiation up to 2 μm induces photocurrent in a single junction amorphous silicon structure at room temperature. The absorber layer is a microcompensated film deposited using very low concentrations of dopant species. Device operation is based on optical excitation of thermal generated carriers from trap states toward valence and conduction band in the high electric field region of the structure. Transient and frequency response under different bias voltages and illuminations conditions are presented. The possibility to use the infrared sensor in low bit rate communication systems has been demostrated by including our detector in a front-end system and measuring its frequency responce.

Quantum efficiency measurement have been reproduced with a numerical model, able to take into account sub-band gap absorption into single films. Model results indicate the presence of a large valence band tail and a high number of dangling bonds and shallow defects ascribed to the presence of dopant atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Ovshinsky, S. R., lzu, M., Ovshinsky, H. C., Deng, X. in Amorphous Silicon Technology, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M. and Matsuda, A. (Mat. Res. Soc. Syrup. Proc. 336, Pittsburgh 1994), p. 645655.Google Scholar
2. Deimel, P.P., Heimhofer, B., Krötz, G., Lilenhof, H.J., Wind, J., Müller, G., Voegs, E., IEEE Photon. Technol. Lett., 2, 499, (1990).Google Scholar
3. Fang, Y.K., Hwang, S.B., Chen, K.H., Liu, C.R., Kuo, L.C., IEEE Trans. Electron Devices, 39, 1350, (1992).Google Scholar
4. Wind, J., Müller, G., Appl. Phys. Lett. 59, 956, (1991).Google Scholar
5. Caputo, D., Cesare, G. de, Nascetti, A., Palma, F., Petri, M., Appl. Phys. Lett., 72, 1229, (1998).Google Scholar
6. Caputo, D., Nascetti, A., Palma, F., IEEE Photon. Tech. Lett., 10, 1147, (1998).Google Scholar
7. Fisher, H., Schulte, J., Rieve, P., Bohm, M. in AmorAhous Silicon Technology, edited by Schiff, E.A., Hack, M., Madan, A., Powell, M. and Matsuda, A. (Mat. Res. Soc. Symp. Proc. 336, Pittsburgh 1994), p. 867872.Google Scholar
8. Buchwald, A., Martin, K., Integrated Fiber-Optics Receivers, (Kluwer Academic Publishers, Boston, 1995), p. 168.Google Scholar
9. Street, R.A., Biegelsen, D.K., Knights, J.C., Phys. Rev. B, 24, 969, (1981).Google Scholar
10. Jackson, W.B., Amer, N.M., Phys. Rev. B, 25, 5559, (1982).Google Scholar
11. Caputo, D., Cesare, G. de, Palma, F., Tucci, M., Minarini, C., Terzini, E., J. Non-Cryst. Solids, 227–230, 380, (1998).Google Scholar