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Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

  • M. Lcurrent (a1), M. A. Foad (a2), J. G. England (a2), D. Lopes (a3), C. Jones (a4) and D. Su (a4)...

Abstract

Atomic profiles (SIMS) and cross-section TEM images of selectively etched, annealed profiles were studied for Boron energies from 20 da eV (200 eV) to 10 keV and RTP anneals at 900, 975 and 1050 C Consistent variations of dopant depth was obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the poly mask.

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Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

  • M. Lcurrent (a1), M. A. Foad (a2), J. G. England (a2), D. Lopes (a3), C. Jones (a4) and D. Su (a4)...

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