Skip to main content Accessibility help
×
Home

The nature of islanding in the InGaAs / GaAs epitaxial system

  • T. Walther (a1), A.G. Cullis (a2), D. J. Norris (a2) and M. Hopkinson (a2)

Abstract

The interest in the phenomenon of islanding in a range of semiconductor systems is in part due to the fundamental importance of the Stranski-Krastanow transition but also driven by potential device applications of self-organized quantum dot arrays. However, the mechanism underlying the island formation is still to a significant degree unclear. In the present work, we focus on the epitaxial InGaAs / GaAs(001) system, with layer deposition by molecular beam epitaxy. Atomic force microscopy is used to measure the surface topography of nominally 4nm thick InxGa1-xAs films. It is shown that the growth mode switches abruptly from flat layer to island growth if a critical Indium composition of x(In)≍0.25 is reached. The structure of such layers during early stages of growth is examined using energy-filtered transmission electron microscopy. Indium gradients in the islanded layers are measured and the driving force for the islanding transition itself is considered.

Copyright

References

Hide All
1.Guha, S., Madhukar, A. and Rajkumar, K.C., Appl. Phys. Lett. 57, 2110 (1990).
2.Eaglesham, D.J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990).
3.Tersoff, J. and LeGoues, F.K., Phys. Rev. Lett. 72, 3570 (1994).
4.Cullis, A.G., Pidduck, A.J. and Emeny, M.T., Phys. Rev. Lett. 75, 2368 (1995).
5.Cullis, A.G., Pidduck, A.J. and Emeny, M.T., J. Cryst. Growth 158, 15 (1996).
6.Tersoff, J., Phys. Rev. Lett. 77, 2017 (1996).
7.Venezuela, P. and Tersoff, J., Phys. Rev. B 58, 10871 (1998).
8.Sauer, R., Nilsson, S., Röntgen, P., Heuberger, W., Graf, V., Hangleiter, A. and Spycher, R., Phys. Rev. B 46, 9525 (1992).
9.Kao, Y.C., Celli, F.G. and Liu, H.Y., J. Vac. Sci. Technol. B 11, 1923 (1993).
10.Saitoh, H., Nishi, K. and Sugou, S., Appl. Phys. Lett. 73, 2742 (1998).
11.Bierwolf, R., Hohenstein, M., Phillipp, F., Brandt, O., Crook, G.E. and Ploog, K., Ultramicroscopy 49, 273 (1993).
12.Jouneau, P.H., Tardot, A., Feuillet, G., Mariette, H. and Cibert, J., J. Appl. Phys. 75, 7310 (1994).
13.Treacy, M.M. and Gibson, J.M., J. Vac. Sci. Technol. B 4, 1458 (1986).
14.Benabbas, T., Francois, P., Androussi, Y. and Lefebvre, A., J. Appl. Phys. 80, 2763 (1996).
15.Liao, X.Z., Zou, J., Cockayne, D.J.H., Leon, R. and Lobo, C., Phys. Rev. Lett. 82, 5148 (1999).
16.Walther, T., Boothroyd, C.B., Humphreys, C.J. and Cullis, A.G., Proc. 13th Int. Conf. Electr. Microsc. 1, 365 (1994), ed. Jouffrey, B. and Colliex, C. (les editions de physique, Les Ulis)
17.Walther, T., Boothroyd, C.B. and Humphreys, C.J., Inst. Phys. Conf. Ser. 146, 11 (1995).
18.Tillmann, K., Thust, A., Lentzen, M., Swiatek, P., Förster, A., Urban, K., Laufs, W., Gerthsen, D., Remmele, T. and Rosenauer, A., Phil. Mag. Lett. 74, 309 (1996).
19.Kret, S., Delamarre, C., Laval, J.Y. and Dubon, A., Phil. Mag. Lett. 77, 249 (1998).
20.Kret, S., Benabbas, T., Delamarre, C., Androussi, Y., Dubon, A., Laval, J.Y. and Lefebvre, A., J. Appl. Phys. 86, 1988 (1999).
21.Rosenauer, A., Fischer, U., Gerthsen, D. and Förster, A., Appl. Phys. Lett. 71, 3868 (1997).
22.Schneider, R., Kirmse, H., Hahnert, I. and Neumann, W., Fres. J. Anal. Chem. 365, 217 (1999).
23.Hofer, F., Warbichler, P. and Grogger, W., Ultramicroscopy 59, 15 (1995).
24.Walther, T., Humphreys, C.J., Cullis, A.G. and Robbins, D. J., Mater. Sci. For. 196–201, 505 (1995).
25.Walther, T. and Humphreys, C.J., J. Cryst. Growth 197, 113 (1999).
26.Liu, N., Tersoff, J., Baklenov, O., Holmes, A.L. and Shih, C.K., Phys. Rev. Lett. 84, 334 (2000).
27.Dehaese, O., Wallart, X. and Mollot, F., Appl. Phys. Lett. 66, 52 (1995).
28.Norris, D.J., Cullis, A.G., Grasby, T.J. and Parker, E.H.C., J. Appl. Phys. 86, 7183 (1999).
29.Glas, F., Guille, C., Henoc, P. and Houzay, F., Inst. Phys. Conf. Ser. 87, 71 (1987).
30.Toyoshima, H., Niwa, T., Yamazaki, J. and Okamoto, A., Appl. Phys. Lett. 63, 821 (1993).

The nature of islanding in the InGaAs / GaAs epitaxial system

  • T. Walther (a1), A.G. Cullis (a2), D. J. Norris (a2) and M. Hopkinson (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed