Skip to main content Accessibility help
×
Home

Nanosecond Thermal Processing of Polysilicon thin Films

  • A. M. McCarthy (a1), K. H. Weiner (a1) and Tom. W. Sigmon (a2)

Abstract

Significant improvement in properties of polysilicon thin films for VLSI applications was achieved using nanosecond thermal processing causing laser-induced melting followed byrecrystallization. Sheet resistance was reduced by as much as a factor of five on polysilicon thin films and underlying oxide integrity was not detectably disturbed.

Copyright

References

Hide All
1. Carey, P. G., Weiner, K. H., Sigmon, T. W., Electron Device Letters, 2 (10), 542, (1988).10.1109/55.17838
2. Carey, P. G., Ph. D. Thesis Dissertation, Stanford University, (1988).
3. Demirlioglu, E., Ph. D. Thesis Dissertation, Stanford University, (1989).
4. McCarthy, A. M., Ph. D. Thesis Dissertation, Stanford University, (1990).
5. Current, M.I. et al. , This Journal.

Nanosecond Thermal Processing of Polysilicon thin Films

  • A. M. McCarthy (a1), K. H. Weiner (a1) and Tom. W. Sigmon (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed