Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-18T04:55:14.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks

Published online by Cambridge University Press:  31 January 2011

Frederic J.C. Fischer ,
Michael Weinl ,
Jöerg K N Lindner  and
Bernd Stritzker
Frederic J.C. Fischer
Affiliation:
fischerfjc@googlemail.com, Universität Augsburg, Institut für Physik, Augsburg, Germany
Michael Weinl
Affiliation:
michael_weinl@gmx.de, Universität Augsburg, Institut für Physik, Augsburg, Germany
Jöerg K N Lindner
Affiliation:
lindner@scholarone.com, Universität Augsburg, Institut für Physik, Augsburg, Germany
Bernd Stritzker
Affiliation:
stritzker@physik.uni-augsburg.de, Universität Augsburg, Institut für Physik, Augsburg, Germany
Get access

Abstract

A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.

Keywords

colloidnanostructureion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD10-02
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Haynes, Ch. L., Duyne, R.P. Van, J. Phys. Chem. B 2001, 105, 5599–5611.Google Scholar
2 Lindner, J.K.N. Gehl, B. Stritzker, B. Nucl. Instr. and Meth. B 242 (2006) 167.Google Scholar
3 Lindner, J.K.N. Kraus, D. Stritzker, B. Nucl. Instr. and Meth. B 257 (2007) 455.Google Scholar
4 Cerofolini, G.F. et al. , Mat. Sci. and Eng. 27 (2000) 1–52.Google Scholar
5 Raineri, V. Coffa, S. Szilágyi, E., Gyulai, J. Rimini, E. Phys. Rev. B 61 (2000) 937.Google Scholar
6 Lindner, J.K.N. et al. , Nucl. Instr. and Meth. B 267 (2009) 1394.Google Scholar
7 Ziegler, J.F. Biersack, J.P. Littmark, U. The Stopping and Range of Ions in Matter, Pergamon, New York, 1985; here the simulation code SRIM 2003.26 was used.Google Scholar