Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T09:56:09.457Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscale Structures by Laser Direct Writing in Silicon

Published online by Cambridge University Press:  15 February 2011

H. Dirac ,
M. Müllenborn  and
J. W. Petersen
H. Dirac
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
M. Müllenborn
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
J. W. Petersen
Affiliation:
Mikroelektronik Centret, Technical University of Denmark. Bldg. 345, DK-2800 Lyngby, Denmark
Get access

Abstract

Laser-induced pyrolytic etching of silicon by chlorine has been used to process structures with nanoscale resolution. A direct write system has been designed, based on an Ar ion laser with a UV-option, on-axis optics, acousto-optic beam modulation, and high resolution translation stages for sample displacement and for focusing.

The resolution of the process is determined by the size of the melt generated by the focused laser beam. The melt size is a function of optical power, and resolutions better than the focused laser spot diameter are achieved by reducing the power onto the silicon sample. In this way we have etched trenches with a resolution better than 150 nm. We demonstrate feature sizes of about 40 nm by closely spacing etched trenches. The minimum width of these features is determined by the etch selectivity. The feature width depends on the trench geometry, line spacing, and on scan speed, due to heat flow confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 43
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ashby, C.I.H. and Tsao, J.Y., in LASER MICROFABRICATION Thin Film Processes and lithography, edited by Ehrlich, D.J. and Tsao, J.Y. (ACADEMIC PRESS INC., San Diego, 1989), pp. 258–260; M. Rothschild, (ACADEMIC PRESS INC., San Diego, 1989), pp. 177–179.Google Scholar
2. Bäuerle, D., Chemical Processing with Lasers, (Springer-Verlag, Berlin, 1986), pp. 8–10.Google Scholar
3. Bloomstein, T.M. and Ehrlich, D.J., Appl. Phys. Lett. 61 (6), 708 (1992).Google Scholar
4. Ehrlich, D.J. and Tsao, J.Y., Appl. Phys. Lett. 44 (2), 267 (1984).Google Scholar
5. Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., Appl. Phys. Lett. 38 (12), 1018 (1981).Google Scholar
6. Treyz, G.V., Beach, R., and Osgood, R.M. Jr., Appl. Phys. Lett. 50 (8), 475 (1987).Google Scholar
7. Lax, M., J. Appl. Phys. 48 (9), 3919 (1977).Google Scholar
8. Lax, M., Appl. Phys. Lett. 33 (8), 786 (1978).Google Scholar
9. Lampert, M.O., Koebel, J.M., and Siffert, P., J. Appl. Phys. 52 (8), 4975 (1981).Google Scholar
10. Jellison, G.E. Jr. and Modine, F.A., Appl. Phys. Lett. 41 (2), 180 (1982).Google Scholar
11. Jackson, K.A. and Kurtze, D.A., J. Cryst. Growth 71, 385 (1985).Google Scholar
12. Grove, A.S., Physics and Technology of Semiconductor Devices, (John Wiley and Sons, Inc., New York, 1967), p. 103.Google Scholar
13. Müllenborn, M., Dirac, H., and Petersen, J.W., submitted to Appl. Phys. Lett., (01–95).Google Scholar
14. Müllenborn, M., Dirac, H., and Petersen, J.W., Appl. Surf. Sci. 86, 568 (1995).Google Scholar