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Nanoscale Modification of Graphene Transport Properties by Ion Irradiation

Published online by Cambridge University Press:  31 January 2011

Filippo Giannazzo ,
Sushant Sonde ,
Vito Raineri  and
Emanuele Rimini
Filippo Giannazzo
Affiliation:
filippo.giannazzo@imm.cnr.it, CNR-IMM, Catania, Italy
Sushant Sonde
Affiliation:
sushant.sonde@imm.cnr.it, CNR-IMM, Catania, Italy
Vito Raineri
Affiliation:
vito.raineri@imm.cnr.it, CNR-IMM, Catania, Italy
Emanuele Rimini
Affiliation:
emanuele.rimini@imm.cnr.it, CNR-IMM, Catania, Italy
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Abstract

Single layers of graphene (SLG) mechanically exfoliated from highly oriented pyrolytic graphite and deposited on SiO2/Si were irradiated with C+ ions at different fluences (from 1013 to 1014 cm-2), in order to modify the transport properties in controlled way. Using a method based on scanning probe microscopy, local measurements of the electron mean free path (l) have been carried out both on pristine and ion irradiated SLG. A lateral inhomogeneity of l was found in both cases, with an increasing spread in the distribution of l for larger fluences. Before irradiation, the spread was explained by the inhomogeneous distribution of charged impurities on SLG surface and/or at the interface with SiO2. After irradiation, lattice vacancies cause a local reduction of l in the damaged regions.

Keywords

scanning probe microscopy (SPM)ion-beam processingfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J09-02
Copyright
Copyright © Materials Research Society 2010

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