Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-21T15:19:17.945Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanoscale electromechanical phenomena in ferroelectric thin films

Published online by Cambridge University Press:  21 March 2011

C. S. Ganpule ,
A. L. Roytburd ,
V. Nagarajan ,
A. Stanishevsky ,
J. Melngailis ,
E. D. Williams  and
R. Ramesh
C. S. Ganpule
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
A. L. Roytburd
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
V. Nagarajan
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
A. Stanishevsky
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
J. Melngailis
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
E. D. Williams
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
R. Ramesh
Affiliation:
Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
Get access

Abstract

Focused ion beam milling was used to fabricate ferroelectric islands in Pb-Zr-Ti-O thin films. The islands ranged in size from 200μm×200μm to 0.3μm×0.3μm. The inverse piezoelectric effect was studied in these islands as a function of their size by tracking the surface displacement of the top electrode of the island (under an applied electric field) using an atomic force microscope (AFM). It was found that there was a substantial increase in the piezoresponse as the size of the island decreased below 100μm×100μm. This increase was attributed to the elastic deformation of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC1.5.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lefki, K. and Dormans, G. J. M., J. Appl. Phys. 76, 1764 (1994).Google Scholar
2. Roytburd, A. L., Alpay, S. P., Nagarajan, V., Ganpule, C. S., Aggarwal, S., Williams, E. D. and Ramesh, R., Phys. Rev. Lett. 85, 190 (2000).Google Scholar
3. Melngailis, J., J. Vac. Sci. Technol B 5, 469 (1987).Google Scholar
4. Ganpule, C. S., Stanishevsky, A., Su, Q., Aggarwal, S., Melngailis, J., Williams, E., and Ramesh, R., Appl. Phys. Lett., 75, 409 (1999).Google Scholar
5. Christman, J. A., Woolcott, R. R. Jr, Kingon, A. I., and Nemanich, R. J., Appl. Phys. Lett., 73, 3851 (1998). G. Zavala, J. H. Fendler and S. Trollier-McKinstry, J. Appl. Phys. 81, 7480 (1997).Google Scholar
6. Roytburd, A. L., Ganpule, C. S., Stanishevsky, A., Williams, E. D., Melngailis, J., and Ramesh, R., unpublished.Google Scholar
7. Haun, M. J., Furman, E., Jang, S. J. and Cross, L. E., Ferroelectrics 99, 45 (1989).Google Scholar