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Nano-scale Characterization of Surface Defects on CMP-finished Si Wafers by Scanning Probe Microscopy Combined with Laser Light Scattering

Published online by Cambridge University Press:  01 February 2011

Kenta Arima ,
Takushi Shigetoshi ,
Haruyuki Inoue ,
Tsukasa Kawashima ,
Takaaki Hirokane ,
Toshihiko Kataoka  and
Mizuho Morita
Kenta Arima
Affiliation:
arima@prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan, +81-6-6879-7274, +81-6-6879-7272
Takushi Shigetoshi
Affiliation:
sige-c@pm.prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Haruyuki Inoue
Affiliation:
inoue@prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Tsukasa Kawashima
Affiliation:
kentan2943@hotmail.co.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Takaaki Hirokane
Affiliation:
thirokane@pm.prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Toshihiko Kataoka
Affiliation:
kataoka@prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
Mizuho Morita
Affiliation:
morita@prec.eng.osaka-u.ac.jp, Osaka University, Department of Precision Science and Technology, 2-1, Yamada-oka, Suita, Osaka, 565-0871, Japan
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Abstract

Scanning probe microscopy has been widely used to evaluate surface microroughness on Si wafers after chemical mechanical polishing (CMP) processes. In this article, we utilize atomic force microscopy (AFM) combined with laser light scattering to detect nano-scale surface defects called microscratches on CMP-finished Si wafers. We find that most microscratches detected by the combined method are very shallow trenches with widths and depths of 80–200 nm and 0.1–0.2 nm, respectively. The dependence of scattered-light intensity on the size of microscratches agrees with theoretical calculations within one order of magnitude.

Keywords

scanning probe microscopy (SPM)CMPdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C08-02
Copyright
Copyright © Materials Research Society 2007

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References

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