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Nanoparticle Precursors for Electronic Materials

Published online by Cambridge University Press:  09 August 2011

D. S. Ginley
Affiliation:
National Center for Photovoltaics
C. J. Curtis
Affiliation:
Basic Energy Sciences Center, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401-3393
R. Ribelin
Affiliation:
National Center for Photovoltaics
J. L. Alleman
Affiliation:
National Center for Photovoltaics
A. Mason
Affiliation:
National Center for Photovoltaics
K. M. Jones
Affiliation:
National Center for Photovoltaics
R. J. Matson
Affiliation:
National Center for Photovoltaics
O. Khaselev
Affiliation:
Basic Energy Sciences Center, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401-3393
D. L. Schulz
Affiliation:
National Center for Photovoltaics
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Abstract

The use of nanoparticle precursors for electronic materials including sulfides, selenides, oxides and the elements has potentially wide ranging implications for improving device properties and substantially reducing the deposition costs. To realize this goal the complex interfacial chemistry of these small particles must be controlled. In this paper we present a number of cases demonstrating the complexity of this chemistry. These include CuInSe2 where the kinetics of phase formation dominate the sintering process; CdTe where sintering proceeds with and without the sintering enhancement of CdCl2, but produces materials different electronically than bulk materials; and the use of compound and elemental nanoparticles ( Ag, Al, Hg-Cu-Te and Sb-Te) for contacts to elemental and compound semiconductors (Si and CdTe).

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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