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Nanometer-Scale Oxide Particles in Gesi Films Grown by Wet Oxidation

  • Tan-Chen Lee (a1), Robert J. Soave (a1), Yosi Y. Shacham-Diamand (a2) and John Silcox (a3)

Abstract

Amorphous GeSi films with different thicknesses and oxygen contents were electron beam evaporated onto Si (KK)) wafers and wet oxidized at 900 °C for 30 Min. If there was no oxygen in the as-deposited film, an epitaxial GeSi film would be grown after wet oxidation. For the samples with oxygen, epitaxial growth broke down when the thickness of the epitaxy exceeded about 200 A and polycrystalline GeSi films were formed. A dedicated STEM (scanning transmission electron Microscope) was used to characterize the sample after oxidation. STEM BF (bright field), ADF (annular dark field), and energy filtered images revealed the presence of small oxide particles in the polycrystalline GeSi films. X-ray microprobe analysis with a windowless detector was employed to identify the oxide particles. The failure of the epitaxy is explained by the random nucleation and growth of GeSi grains on the oxide particles.

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Nanometer-Scale Oxide Particles in Gesi Films Grown by Wet Oxidation

  • Tan-Chen Lee (a1), Robert J. Soave (a1), Yosi Y. Shacham-Diamand (a2) and John Silcox (a3)

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