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Nano-laminating of SiO2 and TiO2: Atomic layer deposition as a tool to gain new insight into interfaces

  • Nicolas Sobel (a1) and Christian Hess (a1)

Abstract

Atomic layer deposition (ALD) was used to deposit a laminate structure of alternating SiO2 and TiO2 monolayers onto a Si wafer. The resulting samples were analyzed in detail by X-ray photoelectron spectroscopy (XPS) revealing a distinct O 1s signature due to the presence of Si-O-Ti species. These findings are in good agreement with those reported for thin ALD films of TiO2 grown on SiO2.

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Nano-laminating of SiO2 and TiO2: Atomic layer deposition as a tool to gain new insight into interfaces

  • Nicolas Sobel (a1) and Christian Hess (a1)

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