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Nano-Crystalline Silicon Thin Film Transistors on PET Substrates Using a Hydrogenation-assisted Metal-induced Crystallization Technique

  • Ashkan Behnam, Saber Haji (a1), Farshid Karbassian (a2), Shams Mohajerzadeh (a3), Aida Ebrahimi (a4), Yaser Abdi (a1) and Michael D Robertson (a5)...

Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/Vs.

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Keywords

Nano-Crystalline Silicon Thin Film Transistors on PET Substrates Using a Hydrogenation-assisted Metal-induced Crystallization Technique

  • Ashkan Behnam, Saber Haji (a1), Farshid Karbassian (a2), Shams Mohajerzadeh (a3), Aida Ebrahimi (a4), Yaser Abdi (a1) and Michael D Robertson (a5)...

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