Skip to main content Accessibility help
×
Home

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

  • Gong-Ru Lin (a1) and Chun-Jung Lin (a2)

Abstract

A Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

Copyright

References

Hide All
1 Iwayama, T. S., Kurumado, N., Hole, D. E. and Townsend, P. D., J. Appl. Phys. 83, 6018 (1998).
2 Garrido, B., López, M., González, O., Pérez-Rodríguez, A. and Morante, J. R., Appl. Phys. Lett. 77, 3143 (2000).
3 Iacona, F., Bongiorno, C., Spinella, C., Boninelli, S. and Priolo, F., J. Appl. Phys. 95, 3723 (2004).
4 Cho, Kwan Sik, Park, Nae-Man, Kim, Tae-Youb, Kim, Kyung-Hyun, Sung, Gun Yong and Shin, Jung H., Appl. Phys. Lett. 86, 071909 (2005).
5 Luterová, K., Pelant, I., Valenta, J., Rehspringer, J. L., Muller, D., Grob, J. J., Dian, J. and Hönerlange, B., Appl. Phys. Lett. 77, 2952 (2000).
6 Lin, G.-R., Lin, C. J., Lin, C. K., Chou, L. J. and Chueh, Y. L., J. Appl. Phys. 97, 094306 (2005).
7 Francois, M., Danlot, J., Grimbert, B., Mounaix, P., Muller, M., Vanbesien, O. and Lippens, D., Microelectron. Eng. 61, 537 (2002).
8 Fischer, P. B., Dai, K., Chen, E. and Chou, S. Y., J. Vac. Sci. Technol. B 11, 2524 (1993).
9 Fowler, R. H. and Nordheim, L. W., Proc. R. Soc. London, Ser. A 119, 173 (1928).
10 Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P. and Nakamura, S., Appl. Phys. Lett. 84, 855 (2004).
11 Huang, H. W., Kao, C. C., Chu, J. T., Yu, C. C., Kuo, H. C. and Wang, S. C., IEEE Photonics Technol. Lett. 17, 5 (2005).

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed