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Multiwafer Production of Long Wavelength Epitaxial Material

  • M. Heyen (a1), D. Schmitz (a1), G. Strauch (a1) and H. JÜrgensen (a1)

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Low pressure MOVPE in a horizontal reactor has proven to be capable of yielding uniform InP, GalnAs and GaInAsP layers [1, 2]. However, the complexity of some devices as MQW lasers and HEMTs require even further improvement in thickness and compositional uniformity. This can be achieved by using the technique of sub-strate rotation to overcome gas phase depletion problems and geometry related non uniformities.

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[1] Heyen, M., Heuken, M., Strauch, G., Schmitz, D., Jorgensen, H. and Heime, K.: Proc. of MRS Spring Meeting, San Diego CA (1989) 245.
[2] Schmitz, D., Strauch, G., Jörgensen, H., Heyen, M. and Harde, P.: Proc. “1st Int'l. Conf. on InP and Rel. Comp.”, Norman OK (1989).
[3] Mircea, A., Mellet, R., Rose, B., Dasté, P. and Schiavini, G.: J. Cryst. Growth 77 (1986) 340.
[4] Woelk, E. and Beneking, H.: J. Cryst. Growth 93 (1988) 216.
[5] Frijlink, P.M.: J. Cryst. Growth 93 (1988) 207.
[6] Frijlink, P.M.: Accepted for publication in J. Cryst. Growth “Conf. Proc. IC MOVPE 5”, Aachen FRG (1990)

Multiwafer Production of Long Wavelength Epitaxial Material

  • M. Heyen (a1), D. Schmitz (a1), G. Strauch (a1) and H. JÜrgensen (a1)

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