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Multi-Technique Characterization of WSix films

Published online by Cambridge University Press:  25 February 2011

S.M. Baumann ,
C.J. Hitzman ,
I.C. Ivanov ,
AY. Craig  and
P.M. Lindley
S.M. Baumann
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
C.J. Hitzman
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
I.C. Ivanov
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
AY. Craig
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
P.M. Lindley
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

WSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichiometry, morphology, impurities, etc. This paper will address the capabilities and limitations of a variety of techniques which are frequently used to characterize WSix films. Techniques which were studied include: Dynamic and Static Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry and Elastic Recoil Detection (RBS/ERD), Auger Electron Spectroscopy (AES), Field Emission Scanning Electron Microscopy (FE-SEM), Total Reflection X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), and X-Ray Photoelectron Spectroscopy (XPS). Film characteristics which were studied included surface morphology; grain structure; film stoichiometry; surface and interface oxide thickness and composition; and surface, bulk, and interface impurity concentrations including metallic, atmospheric, and dopant impurities. Cross correlation between the techniques was performed whenever possible in order to compare the relative accuracy of the techniques as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 675
Copyright
Copyright © Materials Research Society 1994

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References

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