Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-16T22:04:10.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Multiple Quantum NMR Study of Hydrogen Clustering in Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

Karen K. Gleason ,
J. Baum ,
A. N. Garroway ,
A. Pines  and
J. A. Reimer
Karen K. Gleason
Affiliation:
Department of Chemical Engineering, University of California, BerkeleyCA 94720
J. Baum
Affiliation:
Department of Chemistry, University of California, BerkeleyCA 94720
A. N. Garroway
Affiliation:
Code 6120, Naval Research Laboratory, WashingtonDC 20375-5000
A. Pines
Affiliation:
Department of Chemistry, University of California, BerkeleyCA 94720
J. A. Reimer
Affiliation:
Department of Chemical Engineering, University of California, BerkeleyCA 94720
Get access

Abstract

Because Multiple Quantum NMR coherences occur only between spins which are coupled together by the dipole interaction, this technique has been used to study the clustering of hydrogen in amorphous silicon. The clustered hydrogen was found to be associated with the broad line of the single quantum NMR spectra. For device quality films, the average cluster size is approximately six protons. The concentration of these five to seven atom defects increases with increasing hydrogen content until, at very high hydrogen content, the clusters are replaced by a continuous network of silicon-hydrogen bonds.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 83
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Semiconductorsi and Semimetals, Hydrogenated Amorphous Silicon, Vol.21, edited by Pankove, J. I. (Academic Press, Orlando, 1984).Google Scholar
2. Taylor, P. C., Semiconductorsi and Semimetals, Hydrogenated Amorphous Silicon, Vol.21, edited by Pankove, J. I. Academic Press, Orlando, 1984, part C, p. 99.Google Scholar
3. J. A. Reimer. Vaughan, R. W., and Knights, J. C., Phys. Rev. Lett. 44, 193 (1980).Google Scholar
4. Warren, W. S., Weitekamp, D. P., and Pines, A., J. Chem. Phys. 73, 2084 (1980); Y. S. Yen and A. Pines, J. Chem. Phys. 78, 3579 (1983).CrossRefGoogle Scholar
5. Baum, J., Gleason, K. K., Pines, A., Garroway, A. N., and Reimer, J. P., Phys. Rev. Lett. 56, 1377 (1986); J. Baum and A. Pines, J. Am. Chem. Soc., submitted.CrossRefGoogle Scholar
6. Baum, J., Munowitz, M., Garroway, A. N., and Pines, A., J. Chem. Phys. 83, 2015 (1985).CrossRefGoogle Scholar
7. Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).CrossRefGoogle Scholar
8. Brodsky, M. H., Solid State Commun. 36, 55 (1980).CrossRefGoogle Scholar