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Movpe Growth of GaInP/AlGaInP Heterostructure for Visible Laser

  • Myeong S. Oh (a1), Nam H. Kim (a1), Jong W. Lee (a1), Jun Y. Kim (a1) and Tae I. Kim (a1)...


The GaInP/AlGaInP heterostructure was grown on (100) GaAs substrate using low pressure metal-organic vapor phase epitaxy (LP MOVPE) . The growth temperature and pressure were held constant at 740 °C and 40 torr, respectively. The GalnP multiquantum well layers from 10 Å to 85 A were lattice matched to the substrate. High resolution transmission electron microscopy and low temperature photoluminescence measurements indicated that the GaInP/AlGaInP well layers were uniform in thickness and that the interface was abrupt and free of defects. For high performance of visible laser diodes, highly doped p-AlGaInP layer(8X1017/cm3) was obtained. It was also found that the Zn acceptor concentration increased with growth rate. In this study, the GaInP/AlGaInP laser diode, 645nm and 20mW, was fabricated by employing multiquantum well and highly doped p-cladding layer.



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1 Kishino, K., Kikuchi, A., Kaneko, Y. and Nomura, I., Appl. Phys. Lett., 58, p724730(1991)
2 Roentgen, P., Heuberger, W., Bona, G.L. and Unger, P., J. Crystal Growth, 107, p724730(1991)
3 Wang, T.Y., Kimball, A.W., Chen, G.S., Birkedal, D. and Stringfellow, G.B., J. Crystal Growth, 109, p285291(1991)
4 Valster, A., Liedenbaum, C.T.H.F., Finke, M.N., Severens, A.L.G., Boermans, M.J.B., Vandenhoudt, D.E.W. and Bulle-Lieuwma, C.W.T., J. Crystal Growth, 107, p403409(1991)
5 Hatakoshi, G., Nitta, K., Itaya, K., Nishikawa, Y., Ishikawa, M. and Okajima, M., Jpn. J. Appl. Phys., 31, p501507(1992)
6 Hamada, H., Honda, S., Shono, M., Hiroyama, R., Yodoshi, K. and Yamaguchi, T., Electron. Letters, 28, p585587(1992)
7 Nishikawa, Y., Sugawara, H., Ishikawa, M. and Kokubun, Y., J. Crystal Growth, 108, p728732(1991)
8 Minagawa, S., Kondow, M., Yanagisawa, H. and Tanaka, T., J. Crystal Growth, 118, p425429(1992)
9 Ishikawa, M., Suzuki, M., Nishikawa, Y., Itaya, K., Hatakoshi, G., Kokubun, Y. and Uematsu, Y., Inst.Phys.Conf., Ser.No.106, p575580(1989)


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