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The Morphology of the Polysilicon - SiO2 Interface

Published online by Cambridge University Press:  22 February 2011

J.C. Bravman  and
R. Sinclair
J.C. Bravman
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford, California 94305
R. Sinclair
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford, California 94305
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Abstract

A systematic TEM study of the morphology of the polysilicon - SiO2 interface has been performed. LPCVD films were deposited on thermally oxidized silicon substrates, doped via diffusion or ion implantation, and oxidized in pyrogenic steam. Several aspects of the interface have been investigated as a function of dopant species, dopant concentration, oxidation time and oxidation temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 311
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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