Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T10:15:04.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphological study of InN films and nanorods grown by H-MOVPE

Published online by Cambridge University Press:  01 February 2011

Hyun Jong Park ,
Sang Won Kang ,
Olga Kryliouk  and
Tim Anderson
Hyun Jong Park
Affiliation:
hyun@che.ufl.edu, University of Florida, Chemical Engineering, Bldg. 723 Room 118, Chemical Engineering, University of Florida, Gainesville, FL, 32611-6005, United States, 352-846-2989, 352-392-9513
Sang Won Kang
Affiliation:
sang1.kang@samsung.com, University of Florida, Chemical Engineering, United States
Olga Kryliouk
Affiliation:
olgak@grove.ufl.edu, University of Florida, Chemical Engineering, United States
Tim Anderson
Affiliation:
tim@ufl.edu, University of Florida, Chemical Engineering, United States
Get access

Abstract

Hydride-Metalorganic Vapor Phase Epitaxy (H-MOVPE) was used to grow a series of films on c-Al2O3 substrates. Depending on the growth temperature and HCl/TMIn molar ratio, InN deposited as a continuous film or a collection of micro or nanorods, or no InN growth was observed. A chemical equilibrium analysis of the In-N-H-Cl system predicts both InN growth and etching regimes with the nanorod growth observed near the growth-etching transition. All InN rod structures demonstrated well faceted hexagonal structure with a near random orientation of the rods, while the films were polycrystalline.

Keywords

Innitridemorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-09
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lu, H., Schaff, W.J., Eastman, L.F., Mater. Res. Soc. Symp. Proc. 693 (2002) 9.Google Scholar
[2] Kryliouk, O., Park, H.J., Wang, H.T., Kang, B.S., Anderson, T.J., Ren, F. and Pearton, S.J., J. Vac. Sci. Technol. B, 23(5), 1891(2005).CrossRefGoogle Scholar
[3] Lu, H., Schaff, W.J., Eastman, L.F., J. Appl. Phys. 96 (2004) 3577.CrossRefGoogle Scholar
[4] Yamamoto, A., Tsujino, M., Ohkubo, M., Hashimoto, A., Sol. Energy Mater. Sol. Cells 35 (1994) 53.CrossRefGoogle Scholar
[5] Starikov, E., Shiktorov, P., Gruzinskis, V., Reggiani, L., Varani, L., Vaissiere, J.C., Zhao, Jian H., Physica B 314 (2002) 171.CrossRefGoogle Scholar
[6] Inushima, T., Mamutin, V.V., Vekshin, V.A., Ivanov, S.V., Sakon, T., Motokawa, M., Ohoya, S., J. Cryst. Growth 227–228 (2001) 481.CrossRefGoogle Scholar
[7] Davydov, V. Yu, Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, A.J., Graul, J., Haller, E.E., Phys. Status Solidi b 230 (2002) R4.3.0.CO;2-Z>CrossRef3.0.CO;2-Z>Google Scholar
[8] Wu, J., Walukiewicz, W., Shan, W., Yu, K.M., Ager, J.W. III, Haller, E.E., Lu, Hai, Schaff, W.J., Phys. Rev. B 66 (2002) 201403.CrossRefGoogle Scholar
[9] Sugita, K., Takatsuka, H., Hashimoto, A., Yamamoto, A., Phys. Status Solidi b 240 (2003) 421.CrossRefGoogle Scholar
[10] Briot, O., Maleyre, B., Ruffenach, S., Gil, B., Pinquier, C., Demangeot, F., Frandon, J., J. Cryst. Growth 269 (2004) 22.CrossRefGoogle Scholar
[11] Butcher, K.S.A., Wintrebert-Fouquet, M., Chen, P.P.-T., Prince, K.E., Timmers, H., Shrestha, S.K., Shubina, T.V., Ivanov, S.V., Wuhrer, R., Phillips, M.R., Monemar, B., Phys. Status Solidi c 2 (2005) 2263.Google Scholar
[12] Hovel, H.J., Cuomo, J.J., Appl. Phys. Lett. 20 (1972) 71.CrossRefGoogle Scholar
[13] Tyagai, V.A., Evstigneev, A.M., Krasiko, A.N., Andreeva, A.F., Malakhov, V.Ya., Sov. Phys. Semicond. 11 (1977) 1257.Google Scholar
[14] Natarajan, B.R., Eltoukhy, A.H., Greene, J.E., Barr, T.L., Thin Solid Films 69 (1980) 201.CrossRefGoogle Scholar
[15] Tansley, T.L., Foley, C.P., J. Appl. Phys. 59 (1986) 3241.CrossRefGoogle Scholar
[16] Westra, K.L., Lawson, R.P.W., Brett, M.J., J. Vac. Sci. Technol. A 6 (1988) 1730.CrossRefGoogle Scholar
[17] Sullivan, B.T., Parsons, R.R., Westra, K.L., Brett, M.J., J. Appl. Phys 64 (1988) 144.CrossRefGoogle Scholar
[18] Butcher, K.S.A., Wintrebert-Fouquet, M., Chen, P.P.-T., Tansley, T.L., Sriheaw, S., Mater. Res. Symp. Proc. 693 (2002) 341.Google Scholar
[19] Motlan, , Goldys, E.M., Tansley, T.L., J. Cryst. Growth 241 (2002) 165.CrossRefGoogle Scholar
[20] Haddad, D.B., Takur, J.S., Naik, V.M., Auner, G.W., Naik, R., Wenger, L.E., Mater Res. Soc. Symp. Proc. 743 (2003) 701.Google Scholar
[21] Jain, A., Raghavan, S., Redwing, J.M., J. Cryst. Growth 269 (2004) 128.CrossRefGoogle Scholar
[22] Takahashi, N., Niwa, A., Nakamura, T., J. Phys. Chem. Solids 65 (2004) 1259.CrossRefGoogle Scholar
[23] Dimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, Ph., Kehagias, Th., Delimitis, A. and Georgakilas, A., J. Cryst. Growth, 278(2005) 367.CrossRefGoogle Scholar
[24] Grandal, J., Sanchez-Garcia, M.A., J. Cryst. Growth 278 (2005) 373.CrossRefGoogle Scholar
[25] Yamamoto, A., Adachi, M., Hashimoto, A., J. Cryst. Growth 230 (2001) 351.CrossRefGoogle Scholar
[26] Sato, Y., Sato, S., J. Cryst. Growth 146 (1995) 262.CrossRefGoogle Scholar
[27] Yamamoto, A., Shin-ya, T., Sugiura, T., Hashimoto, A., J. Cryst. Growth 189/190 (1998) 461.CrossRefGoogle Scholar
[28] Bi, Z.X., Zhang, R., Xie, Z.L., Xiu, X.Q., Ye, Y.D., Liu, B., Gu, S.L., Shen, B., Shi, Y., Zheng, Y.D., Mater. Lett. 58 (2004) 3641.CrossRefGoogle Scholar
[29] Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, (2003)14.Google Scholar
[30] Kang, S.W., diss., University of Florida 2004.Google Scholar
[31] Lan, Z.H., Wang, W.M., Sun, C.L., Shi, S.C., Hsu, C.W., Chen, T.T., Chen, K.H., Chen, C.C., Chen, Y.F., Chen, L.C., J. Cryst. Growth 269 (2004) 87.CrossRefGoogle Scholar
[32] Zhang, J., Zhang, L., Peng, X. and Wang, X., J. Mater. Chem (2002) 12, 802.CrossRefGoogle Scholar
[33] Liang, C. H., Chen, L. C., Hwang, J. S., Chen, K. H., Hung, Y. T. and Chen, Y. F., Appl. Phys. Lett. 81, 22 (2002).CrossRefGoogle Scholar
[34] Johnson, M. C., Lee, C. J., Bourret-Courchesne, E. D., Konsek, S. L., Aloni, S., Han, W. Q., and Zettl, A., Appl. Phys. Lett. 85, 5670 (2004).CrossRefGoogle Scholar
[35] Kryliouk, O., Reed, M., Dann, T., Anderson, T. and Chai, B., Mat. Sci. Eng. B59, 116–119 (1999).Google Scholar
[36] Sundman, B., Jansson, B., Andersson, J.O., CALPHAD 9 (1985) 153.CrossRefGoogle Scholar