Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T20:58:24.107Z Has data issue: false hasContentIssue false
  • English
  • Français

A More Than 18% Efficiency Hit Structure a-Si/c-Si Solar Cell Using Artificially Constructed Junction (ACJ)

Published online by Cambridge University Press:  21 February 2011

Y. Kuwano ,
S. Nakano ,
M. Tanaka ,
T. Takahama ,
T. Matsuyama ,
M. Isomura ,
N. Nakamura ,
H. Haku ,
M. Nishikuni  and
H. Nishiwaki
...Show all authors
Y. Kuwano
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
S. Nakano
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
M. Tanaka
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
T. Takahama
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
T. Matsuyama
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
M. Isomura
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
N. Nakamura
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
H. Haku
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
M. Nishikuni
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
H. Nishiwaki
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
S. Tsuda
Affiliation:
Sanyo Electric Company Ltd., Functional Materials Research Center, 1–18–13 Hashiridani, Hirakata, Osaka 573, Japan
Get access

Abstract

We have obtained the world's highest total area conversion efficiency of 11.1% for a 100cm2 integrated-type single-junction a-Si solar cell submodule. This was achieved by the development of various advanced technologies, such as a new ultra-thin i/n interface layer and a new laser patterning method using an ablation phenomenon.

To acheive further improvement in the conversion efficiency of a-Si based solar cells, we focus on polycrystalline silicon (poly-Si) thin-film for a-Si/poly-Si tandem solar cells. As far as material technology is concerned, we have used a new solid phase crystallization (SPC) method from amorphous silicon (a-Si) films deposited by plasma-CVD. The maximum mobility of 623 cm2/V.s was achieved on textured substrates at a carrier concentration of 3.0 × 1015 cm-3. This film has been applied to the active layer of poly-Si solar cells on metal substrates and a conversion efficiency of 6.2% has been obtained with poly-Si film of 12 μm thickness made by SPC at 600°C.

In the field of device technology, we have developed new artificially constructed junction (ACJ) solar cells using p-type a-Si/i-type a-Si/n-type crystalline silicon (c-Si). We call this a HIT (Heterojunction with Intrinsic Ihin-layer) structure, and we have achieved a conversion efficiency of 18.1% for this type of solar cells. This is the highest reported value for a cell with a junction fabricated at low temperature (∼ 120°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 857
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsuda, S., Takahama, T., Isomura, M., Tarui, H., Nakashima, Y., Hishikawa, Y., Nakamura, N., Matsuoka, T., Nishiwaki, H., Nakano, S., Onishi, M. and Kuwano, Y., Jpn. J. Appl. Phys., 26, 1, 33 (1987).CrossRefGoogle Scholar
2. Tarui, H., Matsuyama, T., Okamoto, S., Dohjoh, H., Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Onishi, M. and Kuwano, Y., Jpn. J. Appl. Phys., 28, 12, 2436 (1989).Google Scholar
3. Tsuge, S., Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Technical Digest of 5th International PVSEC, 261 (1990).Google Scholar
4. Matsuyama, T., Wakisaka, K., Kameda, M., Tanaka, T., Matsuoka, T., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Jpn. J. Appl. Phys., 29, 11, 2327 (1990).CrossRefGoogle Scholar
5. Takakura, H., Miyagi, K., Kanata, T., Okamoto, H., Hamakawa, Y., Technical Digest of 4th International PVSEC, 403 (1989).Google Scholar
6. Taguchi, M., Tanaka, M., Matsuyama, T., Matsuoka, T., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Technical Digest of 5th International PVSEC, 689 (1990).Google Scholar
7. Matsuyama, T., Sasaki, M., Tanaka, M., wakisaka, K., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Technical Digest of 6th International PVSEC, 753 (1992).Google Scholar
8. Sze, S.M., Physics of Semiconductor Device, 29 (1981), A wiley-interscience publication.Google Scholar
9. Wakisaka, K., Taguchi, M., Sawada, T., Tanaka, M., Matsuyama, T., Matsuoka, T., Tsuda, S., Nakano, S., Kishi, Y. and Kuwano, Y., Proc. The 22nd IEEE Photovoltaic Specialists Conference, 887 (1991).Google Scholar