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A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
In this paper is reported a new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon which has greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time savings of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.
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- Copyright © Materials Research Society 1994
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