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Monolithic Integration of III-V Microcavity Leds on Silicon Drivers using Conformal Epitaxy

  • B. Gérard (a1), X. Marcadet (a1), P. Etienne (a1), D. Pribat (a1), D. Friedrich (a2), J. Eichholz (a2), H. Bemt (a2), H. Hanssen (a2), J-F. Carlin (a3) and M. Ilegems (a3)...

Abstract

Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the III-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V seed, the vertical growth being stopped by an overhanging capping layer. As an example, conformal GaAs layers on Silicon, presenting dislocation densities below 105cm−2, have been obtained using selective vapor phase epitaxy. These layers have then been used as high quality GaAs on Si substrates for subsequent vertical MBE regrowth of active structures. In this paper, we report on the integration of surface-emitting microcavity LEDs with their silicon drivers using this conformal growth technique. The global technology concept and the design of the active structures are first presented. The compatibility of the conformal growth technique with CMOS technology is then checked: the impact of the integration process on the performances of the drivers is for example quantified. Characterisations of the high crystalline quality of the conformal layers and of the LEDs structures grown on it are then shown. The electro-optical characteristics of the LEDs on Si are finally compared to those of reference LEDs on GaAs substrates in order to prove the efficiency of the integration procedure.

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1. Goodman, J. W., Leonberger, F. I., Kung, S.-Y. and Athale, R. A., Proc. IEEE 72 (1984) 850
2. Miller, D. A. B. in Materials Reliability in Microelectronics VIII, edited by Bravman, J., Korhonen, M., Loyd, J. and Marieb, T. (Mater. Res. Soc. Proc. 516, Pittsburgh, PA, 1998)
3. Goossen, K.W. et al., IEEE Photonics Technology Letters, 7 (1995) 360 and 8 (1996) 221
4. Fang, S. F., J. Appl. Phys. 68 (1990) 7, R31
5. Egawa, T., Jap. J. Appl. Phys. 32 (1993) 650
6. Pribat, D., Gdrard, B., Dupuy, M. and Legagneux, P., Appl. Phys. Lett. 60 (1992) 2144
7. Gérard, B., Pribat, D., Bisaro, R., Costard, E., Nagle, J., Ricciardi, J. and Dupuy, M. in Evolution of Surface and Thin Films Microstructure, edited by Atwater, H. A., Chason, E., Grabow, M. H. and Lagally, M.G. (Mater. Res. Soc. Proc. 280, Pittsburgh, PA, 1993, 675680).
8. Parillaud, O. Gil-Lafon, E., Gérard, B. Etienne, P. and Pribat, D., Appl. Phys. Lett. 68 (1996) 19
9. Benisty, H., Stanley, R. and Mayer, M., J. Opt. Soc. Am. A 15 (1998) 1192
10. Horikoshi, Y., Kawashima, M., Yamaguchi, H., Jap. J. Appl. Phys. 25 (1986) L868
11. Carlin, J.F., Royo, P., Ilegems, M., Gérard, B. Marcadet, X. and Nagle, J., Proceedings of the 10th international MBE conference, Cannes 1998, to be published

Monolithic Integration of III-V Microcavity Leds on Silicon Drivers using Conformal Epitaxy

  • B. Gérard (a1), X. Marcadet (a1), P. Etienne (a1), D. Pribat (a1), D. Friedrich (a2), J. Eichholz (a2), H. Bemt (a2), H. Hanssen (a2), J-F. Carlin (a3) and M. Ilegems (a3)...

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