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Monitoring of Sidewall Spacer Etch by Optical Emission Spectroscopy and Mass Spectroscopy

  • K. Min (a1), J. J. Chambers (a2), G. N. Parsons (a2) and J. R. Hauser (a1)

Abstract

Selective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.

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References

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1. Singer, P., Semiconductor International, 152, July 1996.
2. Wan, Z., Liu, J. and Lamb, H., JVST A, 2035, 1995.
3. Heinecke, R., Solid-State Electronics, Vol 18, 1146, 1975.
4. Ephrath, L. and Petrillo, E., JECS, 2282, 1982.
5. Coburn, J. and Winters, H., JVST, 391, 1979.
6. Iwakuro, H., Kuroda, T., Shen, D. and Lin, Z., JVST B, 707, 1996.
7. Mara, D. and Aydil, E., JVST A, 2508, 1997.
8. Roosemalen, A., Vacuum, 429, 1984.

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