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Monitoring of Sidewall Spacer Etch by Optical Emission Spectroscopy and Mass Spectroscopy

  • K. Min (a1), J. J. Chambers (a2), G. N. Parsons (a2) and J. R. Hauser (a1)


Selective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.



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