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Molecular-level Manipulation Technology for Low-k Dielectrics Controlling the Physical and Chemical Structures toward 32nm-node BEOLs

Published online by Cambridge University Press:  01 February 2011

Yoshihiro Hayashi
Yoshihiro Hayashi*
Affiliation:
y-hayashi@az.jp.nec.com, NEC Electronics, LSI Reserach Laboratory, 1120, Shimokuzawa,, Sagamihara, KANAGAWA, 229-1198, Japan, +81 42 771 4267, +81 42 771 0886
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Abstract

Low-k materials in advanced interconnect modules are required not only to lower the parasitic capacitances, but also to have mechanical stability with damage-less interfaces. By plasma-polymerization (PP) process using ring-type siloxane precursor, a new self-organized porous SiOCH film is developed with preserving the original hexagonal silica-backbone structure, thus so called as a molecular-pore-stack (MPS) SiOCH film. The hydrocarbon-rich MPS film has high endurance to the process damages. A density-modulated MPS film is obtained with reinforced interfaces by plasma co-polymerization (PcP) process using not only the ring-type but also linear-type siloxane. Furthermore, an ultimate full low-k module with low-k silica-amorphous-carbon composite (SACC) cap, instead of high-k SiCN, is also obtained simply by the one-step deposition scheme. The modulated PcP process and the sophisticated molecular design of the precursor siloxane provides scaled-down interconnect modules with good mechanical strength and excellent dielectric reliability at a low manufacturing cost, applicable for 45/32/22nm-nodes ULSIs.

Keywords

dielectricpolymerizationporosity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N01-01
Copyright
Copyright © Materials Research Society 2008

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References

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