Skip to main content Accessibility help

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

  • T. Ohira (a1), O. Ukai (a1), M. Noda (a1), Y. Takeuchi (a2), M. Murata (a2) and H. Yoshida (a2)...


We have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.



Hide All
1. Spear, W. E. and LeComber, P.G., Solid State Commun. 17, 1193(1975).
2. Tanaka, K. and Matsuda, A., Mater. Sci. Rep. 2, 139(1987).
3. Gleason, K. K., Wang, K. S., Chen, M. K., and Reimer, J. A., J. Appl. Phys. 61, 2866(1987).
4. McCaughey, M. J. and Kushner, M. J., J. Appl. Phys. 65, 186(1989).
5. Brenner, D.W., Robertson, D.H., Carty, R.J., Srivastava, D. and Garrison, B.J., Mat. Res. Soc.Symp. Proc. 278, 255(1992).
6. Tersoff, J., Phys. Rev. Lett. 56, 632(1986); Phys. Rev. B37, 6991(1988); 39, 5566(1989).
7. Brenner, D. W., Mat. Res. Soc. Symp. Proc. 141, 59(1989); Phys. Rev. B 42, 9458(1990).
8. Ohira, T., Inamuro, T. and Adachi, T., Sol. Energy Mater. Sol. Cells 34, 565(1994).
9. Ohira, T., Inamuro, T. and Adachi, T., MRS Symp. Proc. 336, 177(1994).
10. Jeffery, F.R., Shanks, H.R., and Danielson, G.C., J. Appl. Phys. 50, 7034(1979).
11. Itabashi, N., Nishiwaki, N., Magane, M., Naito, S., Goto, T., Matsuda, A., Yamnada, C. and Hirota, E., Jpn. J. Appl. Phys. 29, L505(1990).
12. Nishio, H., Ganguly, G. and Matsuda, A., MRS Symp. Proc. 297, 91(1993).
13. Berendsen, H.J.C., Postma, J.P.M., van Gunsteren, W.F., DiNola, A. and Haak, J.R., J.Chem. Phys. 81, 3684(1984).
14. Verlet, L., Phys. Rev. 159, 98(1967).
15. Ohira, T., Ukai, O., Adachi, T., Takeuchi, Y., and Murata, M., Phys. Rev. B 52, 8283(1995).
16. Ganguly, G., Nishio, H. and Matsuda, A., Appl. Phys. Lett. 64, 3581(1994).
17. Shirafuji, T., Chen, W., Yamamuka, M. and Tachibana, K., Jpn. J. Appl. Phys. 32, 4946(1993).
18. Menelle, A., Ph.D. thesis, Universite Pierre Marie Curie (Paris VI), 1987.

Related content

Powered by UNSILO

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

  • T. Ohira (a1), O. Ukai (a1), M. Noda (a1), Y. Takeuchi (a2), M. Murata (a2) and H. Yoshida (a2)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.