Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-05-14T18:53:05.164Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Hydrogen Adsorption onto the Si(111) 7 × 7 Surface

Published online by Cambridge University Press:  28 February 2011

S. H. Wolff ,
S. Wagner ,
D. Loretto  and
J. M. Gibson
S. H. Wolff
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. Loretto
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

We have studied the adsorption of molecular hydrogen onto the Si(111) 7 × 7 surface using UHV TEM at temperatures between room temperature and 780'C. We demonstrated that molecular hydrogen at 4 × 10−6 Torr dissociatively chemisorbed onto the Si(l11) surface at elevated temperatures and the stable hydrogenated Si(l11) surface is shown to be a strong function of temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 575
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ibach, H. and Rowe, J. E., Surface Sci. 43 (1974) 481.CrossRefGoogle Scholar
[2] Sakurai, T. and Hagstrum, H. D., Phys. Rev. B12 (1975) 5349.CrossRefGoogle Scholar
[3] Pandey, K. C., Sakurai, T. and Hagstrum, H. D., Phys. Rev. Letters 35 (1975) 1728.CrossRefGoogle Scholar
[4] Appelbaum, J. A. and Hamann, P. R., Phys. Rev. Letters 34 (1975) 806.CrossRefGoogle Scholar
[5] Pandey, K. C., Phys. Rev. B14 (1976) 1557.CrossRefGoogle Scholar
[6] Sakurai, T., Muller, E. W., Culbertson, R. J. and Merwed, A. J., Phys. Rev. Letters 39 (1977) 578.CrossRefGoogle Scholar
[7] Froitzheim, H., Lammering, H., and Gunter, H. L., Phys. Rev. B 27 (1983) 2278.CrossRefGoogle Scholar
[8] Pandey, K. C., IBM J. Res. Develop. 22 (1978) 250.CrossRefGoogle Scholar
[9] Wagner, H., Butz, B., Backes, U. and Bruchmann, D.d, Solid State Commun. 38 (1981) 1155.CrossRefGoogle Scholar
[10] MacRae, E. G. and Caldwell, C. W., Phys. Rev. Letters 46 (1981) 1632.CrossRefGoogle Scholar
[11] Culbertson, R. J., Feldman, L. C., Silverman, P. J. and Haight, R., J. Vac. Sci. Tech. 20 (1982) 868.CrossRefGoogle Scholar
[12] Chabel, Y. J., Higashi, G. S. and Christman, S. B., Phys. Rev. B 28 (1983) 4472.CrossRefGoogle Scholar
[13] Kobayashi, H., Edamoto, K., Onchi, M. and Nishijima, M., J. Chem. Phys. 78 (1983) 7429.CrossRefGoogle Scholar
[14] MacRae, E. G., Surface Sci. 147 (1984) 663.CrossRefGoogle Scholar
[15] Froitzheim, H., Kohler, U. and Lammering, H., Surface Sci. 149 (1985) 537.CrossRefGoogle Scholar
[16] Ichimiya, A., Mizuno, S., Surface Sci., 191 (1987) L765.CrossRefGoogle Scholar
[17] Takayanagi, K., Tanishiro, Y., Takahasi, S. and Takahasi, M., Surface Sci., 164 (1985) 367.CrossRefGoogle Scholar
[18] Johnson, N. M., Ready, S. E., Boyce, J. B., Poland, C. D., Wolff, S. H., and Walker, J., APL 53 (1988) 1626.Google Scholar
[19] Gates, S. M., Greenlief, C. M., and Beach, D. B., Mat. Res. Soc. Symp. Proc., Symp E, Fall 1988 to be published.Google Scholar
[20] Gossman, H., Mat. Res. Soc. Symp. Proc. Vol. 94, p. 53 (1987).CrossRefGoogle Scholar
[21] McDonald, M. M., to be published.Google Scholar
[22] Gibson, J. M. and Lanzerotti, M. Y., Mat. Res. Soc. Symp. Proc., Symp. R, Fall 1988 to be published.Google Scholar
[23] Moore, G. E. and Unterwold, F. C., Journal of Chemical Physics Vol. 40, p. 2626 (1964).CrossRefGoogle Scholar
[24] Ian Robinson, Phys. Rev. B 1987.Google Scholar
[25] Schulze, G. and Henzler, M., Surface Science 124 (1983) 336.CrossRefGoogle Scholar