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A Molecular Dynamics Study of InGaAs Layers on GaAs Substrates

Published online by Cambridge University Press:  22 February 2011

G J Moran ,
I Morrison  and
C C Matthai
G J Moran
Affiliation:
Department of Physics and AstronomyUWCC, Cardiff CF2 3YB, UK
I Morrison
Affiliation:
Department of Physics and AstronomyUWCC, Cardiff CF2 3YB, UK
C C Matthai
Affiliation:
Department of Physics and AstronomyUWCC, Cardiff CF2 3YB, UK
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Abstract

We have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 315
Copyright
Copyright © Materials Research Society 1994

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References

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