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Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.
Published online by Cambridge University Press: 25 February 2011
Abstract
Displacement cascades formed in a silicon crystal by As+ and Si+ ions with energy in the range 50–500 eV are constructed with a molecular dynamics and a Monte Carlo simulation method. Conspicuous spike effects are observed with the molecular dynamics simulation.
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- Copyright © Materials Research Society 1989
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