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Molecular Beam Epitaxy of InGaP Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers

Published online by Cambridge University Press:  21 February 2011

H. Kawanami  and
T. Sekigawa
H. Kawanami
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
T. Sekigawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
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Abstract

Single domain InxGa(1-x)P (x=0.4) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with solid phosphorous source. The effects of the initial 100 nm thick interfacial buffer layer such as InGaP (i.e. direct growth without buffer layer), GaP, AJP, and GaAs were examined. Superior surface morphologies were indicated for the films with GaP, A1P, and GaAs buffer layers compared with the films on InGaP buffer layer. The results indicated the necessity of some kind of initial buffer layer different from the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 147
Copyright
Copyright © Materials Research Society 1996

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References

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