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Molecular beam epitaxy growth of Sr1-x K x Fe2As2 and Ba1-x K x Fe2As2

  • Michio Naito (a1) (a2), Shinya Ueda (a1) (a2), Soichiro Takeda (a1) (a2), Shiro Takano (a1) (a2) and Akihiro Mitsuda (a3)...

Abstract

Single-crystalline films of superconducting Sr1-x K x Fe2As and Ba1-x K x Fe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of T c in Ba1-x K x Fe2As2 for x = 0.0 to 1.0. The highest T c on (T c end) so far attained for Ba1-x K x Fe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

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1. Kamihara, Y., Watanabe, T., Hirano, M., and Hosono, H., J. Am. Chem. Soc. 130 (2008) 3296.
2. Johrendt, D. and Pottgen, R., Physica C 469 (2009) 332.
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5. Takeda, S., Ueda, S., Yamagishi, T., Agatsuma, S., Takano, S., Mitsuda, A., and Naito, M., Appl. Phys. Express 3 (2010) 093101.
6. Yamagishi, T., Ueda, S., Takeda, S., Takano, S., Mitsuda, A., and Naito, M., Physica C 471 (2011) 1177.
7. The trend lines are as follows: c 0 = 0.8132x + 13.062 for Ba1- x K x Fe2As2 after ref. [2] and c 0 = 1.4656x + 12.364 for Sr1- x K x Fe2As2 after ref. [3].
8. Chen, H., Ren, Y., Qiu, Y., Bao, W., Liu, R. H., Wu, G., Wu, T., Xie, Y. L., Wang, X. F., Huang, Q., and Chen, X. H., Europhys. Lett. 85 (2009) 17006.

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