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Modified Oxide Properties from Dopant Effects at the Si-SiO2 Interface

  • Michael A. Jackson (a1), Lawrence Salvati (a2), Roland L. Chin (a3) and Wayne A. Anderson (a1)

Abstract

Both thin, 60→140Å thick, and native oxides on As and P doped Si were studied via null ellipsometry and angle resolved ESCA. Results showed higher oxide growth rates to occur for higher surface concentrations of a given dopant. For similar surface concentrations, P-doped samples oxidized faster than As-doped, in both cases. Exact oxidation rates were not determined as results indicate that stoichiometric variations and oxidation of carbon contamination influence thickness determination of these oxides.

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