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Modified Oxide Properties from Dopant Effects at the Si-SiO2 Interface

  • Michael A. Jackson (a1), Lawrence Salvati (a2), Roland L. Chin (a3) and Wayne A. Anderson (a1)


Both thin, 60→140Å thick, and native oxides on As and P doped Si were studied via null ellipsometry and angle resolved ESCA. Results showed higher oxide growth rates to occur for higher surface concentrations of a given dopant. For similar surface concentrations, P-doped samples oxidized faster than As-doped, in both cases. Exact oxidation rates were not determined as results indicate that stoichiometric variations and oxidation of carbon contamination influence thickness determination of these oxides.



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1. Rajeswaran, G., Rao, V.J., Jackson, M.A., Thayer, M., Anderson, W.A. and Rao, B.B., IEEE Trans. Elec. Dev., ED–30, No. 12, 1840 (1983).
2. Rao, B.B., Ph.D. thesis, State University of New York at Buffalo, 1985.
3. Yu, Z. and Dutton, R.W., IEEE Elec. Dev. Lett., EDL–6, No. 10, 507 (1985).
4. Chor, E.F., Ashburn, P. and Bunnschweiler, A., IEEE Elec. Dev. Lett., EDL–6, No. 10, 516 (1985).
5. Taft, E. and Cordes, L., J. Electrochem. Soc., 126, No. 1, 131 (1979).
6. Herbots, N., Gloesner, D., Van Loenen, E.J. and Fischer, A.E.M.J., presented at the 1984 MRS Fall Meeting, Boston, MA., 1985 (unpublished).
7. Sai-Holasz, G.A., Short, K.T. and Williams, J. S., IEEE Elec. Dev. Lett., EDL–6, No. 6, 285 (1985).
8. McCrakin, F.L., NBS Tech. Note 479, 1969.
9. Vasquez, R.P. & Grunthaner, F.J., Sur. Sci., 99, 681 (1980).


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